Editing by Kate Yuan

China's southeastern Fujian Province incorporated third-generation semiconductors in its 14th Five-Year Plan for developing strategic emerging industries, released early this month.

The plan points out to "support the leading enterprises in Fujian province to develop the GaN and other third-generation semiconductor materials" and will create platforms for third-generation semiconductor innovation and solve key technical problems in the industry chain.

Meanwhile, the local press reported that Fuzhou, the capital city of Fujian, recently confirmed a third-generation semiconductor project with RMB6 billion ($94 million) investment. The project is to build an 8-inch fab to produce GaN power devices in Changle District. It will require purchasing about 20 to 30 MOCVD equipment and is expected to strengthen Fuzhou's position in China's third-generation semiconductor industry by integrating local resources.

Fujian's 14^th Five Year Plan also set up a goal of building a "Digital Fujian" to focus on four key electronic industries - high-performance IC, ultra-high-definition video display, and optoelectronics. The plan calls to expand the diversified and high-quality supply of next-generation information networks and high-end information services and lift Fujian into a leading position in the country's new-generation IT industry. By 2025, the province's new-generation IT industry's added value will reach RMB350 billion ($53.8 billion), with a 10.9 percent average annual growth.