By Miranda Li

Silan Microelectronics (士兰微), based in Hangzhou, east China's Zhejiang Province, has become one of the top 10 IGBT suppliers globally. Its photovoltaic IGBTs have passed the test and delivered to the domestic mainstream inverter manufacturers, according to an IP report from Shenzhen Jiaqin Intellectual Property Agency, a subsidiary of JW Insights.

Silan Microelectronics filed an invention patent named "Drive Circuit and Driving Method of IGBT" on June 18, 2021.

Silan's patented technology enables intelligent switching between two driving modes to reduce the surge current at the turn-on moment of IGBT. It helps save the pin resources of the circuit, to the benefit of the circuit's packaging cost reduction and the improvement of the driving circuit's application range, said the Jiaqin report.

With the worldwide shortage and price increase of the photovoltaic IGBTs, more localized manufacturing is taking place, giving more opportunities to Silan Microelectronics.

As a subsidiary of JW Insights, Shenzhen Jiaqin Intellectual Property Agency comprises IP experts, lawyers, and patent attorneys with experience in working for Fortune 500 companies.