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GaN power device application is on rapid rise worldwide and Innoscience emerges as a leading supplier from China
Chinese article by 武守哲
English Editor 张未名
06-15 20:04

The popularity of GaN (gallium nitride) power devices since 2020, spurred by mainly fast charging in the consumer market, has triggered a rapid increase in its supplies worldwide. The newly released annual report on GaN by the research firm Yole said that the consumer market value for GaN devices will reach $915.6 million by 2027, and the annual compound growth rate will be 52% between 2021 and 2027. 

The Yole report mentions the major GaN supplies around the world, including Power Integrations, Navitas, and GaN Systems. It is Innoscience(英诺赛科) from China that is listed out in the report. 

Innoscience is based in Suzhou in eastern China's Jiangsu Province. Founded in 2015, it is the largest 8-inch IDM (Integrated Device Manufacturer), entirely focusing on GaN technology in the world, with the largest 8-inch wafers manufacturing capacity, the company said on its website. 

The company is investing more than $400 million to expand its eight-inch wafer production capacity from 10,000 wafers per month to 70,000 wafers by 2025.

Meanwhile, Innoscience has launched INN040W040A, an enhanced GaN-on-Si power device, the first such product to be mass-produced, according to the Chinese website chongdiantou.com. Innoscience will use the upgraded QFN packaging to further improve its weldability and reliability.

Yole expects that the penetration rate of GaN in the data communications and telecommunications sector will increase. It will have a compound annual growth rate of 69% in the 2021 to 2027 forecast period and exceed a $617.8 million market value by 2027.

The automotive market is the next new growth for GaN, the Yole report pointed out. 

The market for automotive applied GaN will exceed $227 million, with a compound annual growth rate of 99% from 2021 to 2027.

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