By Gabby Chen
(JW Insights) Mar 1 -- 46th Research Institute affiliated with China Electronics Technology Group Corporation (CETC46中国电科46所) successfully produced the thermal field structure that capable of growing 6-inch gallium oxide single crystal, Chinese language presses reported.
The project can be used to develop 6-inch gallium oxide single crystal substrates, supporting practical applications of gallium oxide materials.
Founded in 1958, the Tianjin-based CETC46th Research Institute is one of the earliest in China to engage in developing semiconductor materials and optical fibers.
Meanwhile, its parent company CETC achieved a number of breakthroughs over the last couple of years in ultrawide bandgap semiconductor materials - gallium oxide, aluminum nitride and diamond, empowering the development of the industry, according to the press report.
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