By Kate Yuan

(JW Insights) Sep 21 -- China’s Dongke Semiconductor (东科半导体) and Peking University have officially unveiled the Joint R&D Center on Third-Generation Semiconductor on September 15, according to the official Wechat account of Dongke Semiconductor.

The R&D center will conduct research and development on key technologies and significant applications of third-generation semiconductor GaN. It will focus on the breakthroughs in materials, devices, and process technology bottlenecks to enhance Dongke Semiconductor's innovative capabilities and market leadership in third-generation semiconductor technology.

Founded in 2009, Dongke Semiconductor is mainly engaged in high-frequency, high-efficiency, and green power ICs and large-power power ICs. The company is headquartered in Ma'anshan City, eastern China’s Anhui Province, with technical and sales departments located in multiple domestic and international regions, including Shenzhen, Wuxi, Qingdao, Taiwan, and India.

This Beijing-based R&D center is the latest addition to Dongke Semiconductor's existing research centers in Qingdao, Wuxi, Shenzhen, and Ma'anshan.

In March of this year, Dongke Semiconductor and Anhui University of Technology jointly established a collaborative laboratory in Ma'anshan. Both parties expressed their intention to fully leverage the platforms of the university and its laboratory.