By Li Panpan

(JW Insights) Oct 24 -- The research team headed by Wei Xing of the Shanghai Institute of Microsystems (SIM) of the Chinese Academy of Sciences has made a breakthrough in 300mm Silicon-on-insulator (SOI) wafer manufacturing technology and produced the first 300mm radio frequency (RF) SOI wafer in China, according to the institute's social media WeChat public account.

Based on the 300mm SOI R&D platform of the National Key Laboratory of Integrated Circuit Materials, SIM's team solved many core technical problems such as low oxygen and high resistance crystal preparation, low stress, and high resistance polysilicon film deposition, and non-contact flattening required by the 300 mm RF-SOI wafer.

The independent manufacturing of 300mm RF-SOI wafers will effectively promote the coordinated and rapid development of the entire Chinese RF-SOI chip design, foundry, and packaging industry chain and provide a solid guarantee for the supply security of Chinese SOI wafers, said the institute.

SOI technology is based on silicon materials and integrated circuits and can break through their limitations with unique advantages. SOI can be used in various components, such as RF-SOI applications for communication radio frequency front-ends, high-power SOI components, and optical communication SOI technology.